tag: dual damascene

Impacts Of Process Flow, Scaling, And Variability On Interconnect Performance
By Lam Research - 26 Apr, 2023 - Comments: 0

Virtual fabrication is used to evaluate the performance of interconnects (line and via resistance, capacitance, etc.) across pitches compatible with either EUV single exposure or SADP for three different process flows: single damascene, dual damascene, and semi-damascene (subtractive metal etch). The effects of process variation for the three flows are also investigated to determine the relativ... » read more

Big Changes Ahead In Power Delivery, Materials, And Interconnects
By Laura Peters - 22 Mar, 2023 - Comments: 0

Part one of this forecast looked at evolving transistor architectures and lithography platforms. This report examines revolutions in interconnects and packaging. When it comes to device interconnects, it’s hard to beat copper. Its low resistivity and high reliability have served the industry exceedingly well as both on-chip interconnect and wires between chips. But in logic chips, with int... » read more

Marangoni Effect-Based Under-Layer For A Dual Damascene Via-First Approach
By Brewer Science - 17 Feb, 2021 - Comments: 0

One of the main challenges of a Dual Damascene (DD) via-first process is the control of the Critical Dimensions (CDs) in the lithography of the trenches. The PhotoResist (PhR) thickness presents variations from the via arrays to the open areas, which cause the variation of CDs: the swing effect. The planarization of a DD via-first process is reported. A dual-layer solution is used to demonstrat... » read more

Making Interconnects Faster
By Mehul Naik - 22 May, 2017 - Comments: 3

In integrated circuits, interconnect resistance is a combination of wire and via resistance. Wire resistance of a conductor depends on several factors, one of which is the electron scattering at various surfaces and grain boundaries. Via resistance, on the other hand, is a function of the thickness or resistivity of the layers at the bottom of the via through which current must travel. T... » read more

Interconnect Challenges Grow
By Mark LaPedus - 20 Aug, 2015 - Comments: 1

It’s becoming apparent that traditional chip scaling is slowing down. The 16nm/14nm logic node took longer than expected to unfold. And the 10nm node and beyond could suffer the same fate. So what’s the main cause? It’s hard to pinpoint the problem, although many blame the issues on lithography. But what could eventually hold up the scaling train, and undo Moore’s Law, is arguably t... » read more

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