Transistor Aging Intensifies At 10/7nm And Below


Transistor aging and reliability are becoming much more troublesome for design teams at 10nm and below. Concepts like ‘infant mortality’ and 'bathtub curves' are not new to semiconductor design, but they largely dropped out of sight as methodologies and EDA tools improved. To get past infant mortality, a burn-in process would be done, particularly for memories. And for reliability, which... » read more

Improving Transistor Reliability


One of the more important challenges in reliability testing and simulation is the duty cycle dependence of degradation mechanisms such as negative bias temperature instability ([getkc id="278" kc_name="NBTI"]) and hot carrier injection (HCI). For example, as previously discussed, both the shift due to NBTI and the recovery of baseline behavior are very dependent on device workload. This is ... » read more

Transistor-Level Verification Returns


A few decades ago, all designers did transistor-level verification, but they were quite happy to say goodbye to it when standard cells provided isolation at the gate-level and libraries provided all of the detailed information required, such as timing. A few dedicated people continued to use the technology to provide those models and libraries and the most aggressive designs that wanted to stri... » read more