Power/Performance Bits: Feb. 9

Molybdenum disulfide memristors Researchers at Michigan Technological University constructed an ideal memristor based on molybdenum disulfide nanosheets. "Different from an electrical resistor that has a fixed resistance, a memristor possesses a voltage-dependent resistance," said Yun Hang Hu, professor of materials science and engineering at MTU, adding that a material's electric propert... » read more

Power/Performance Bits: Aug. 11

Tilting magnets for memory UC Berkeley researchers discovered a new way to switch the polarization of nanomagnets, which may offer a way for high-density storage to move from hard disks onto integrated circuits and potentially open the door to a memory system that can be packed onto a microprocessor. Creating and switching polarity in magnets without an external magnetic field has been a ... » read more