Author's Latest Posts


Energy-Efficient Signal Detectors For Massive MIMO Using SRAM-Based IMCs (Univ. of Illinois at Urbana–Champaign)


A new technical paper titled "Energy-Accuracy Trade-Offs in Massive MIMO Signal Detection Using SRAM-Based In-Memory Computing" was published by researchers at the University of Illinois at Urbana–Champaign. Abstract "This paper investigates the use of SRAM-based in-memory computing (IMC) architectures for designing energy efficient and accurate signal detectors for massive multi-input mu... » read more

Microservice-Based LLM Agents Enable EDA Flow Automation (Duke Univ. and Univ. of Maryland)


A new technical paper titled "AutoEDA: Enabling EDA Flow Automation through Microservice-Based LLM Agents" was published by researchers at Duke University and University of Maryland. Abstract "Modern Electronic Design Automation (EDA) workflows, especially the RTL-to-GDSII flow, require heavily manual scripting and demonstrate a multitude of tool-specific interactions which limits scalabili... » read more

Power Gating Enabling in NPUs (Univ. of Illinois Urbana-Champaign)


A new technical paper titled "ReGate: Enabling Power Gating in Neural Processing Units" was published by researchers at the University of Illinois Urbana-Champaign. Abstract "The energy efficiency of neural processing units (NPU) is playing a critical role in developing sustainable data centers. Our study with different generations of NPU chips reveals that 30%–72% of their energy consump... » read more

The Severity Of Test Escapes And SDCs Caused By Them (Google)


A new technical paper titled "Silent Data Corruption by 10x Test Escapes Threatens Reliable Computing" was published by Google. Abstract "Too many defective compute chips are escaping existing manufacturing tests -- at least an order of magnitude more than industrial targets across all compute chip types in data centers. Silent data corruptions (SDCs) caused by test escapes, when left unadd... » read more

LtRAM And StRAM: Specialized Memory Architectures Leveraging Workload-Specific Access Characteristics (Stanford, Microsoft)


A new technical paper titled "Towards Memory Specialization: A Case for Long-Term and Short-Term RAM" was published by researchers at Stanford University and Microsoft, and an independent researcher. Abstract "Both SRAM and DRAM have stopped scaling: there is no technical roadmap to reduce their cost (per byte/GB). As a result, memory now dominates system cost. This paper argues for a parad... » read more

In-NAND Self-Encryption Architecture In A 4D-NAND Structure (DGIST, Georgia Tech Et Al.)


A new technical paper titled "FlashVault: Versatile In-NAND Self-Encryption with Zero Area Overhead" was published by researchers at DGIST, Georgia Tech, POSTECH, Samsung Electronics, Virginia Tech, and Korea University. Abstract "We present FlashVault, an in-NAND self-encryption architecture that embeds a reconfigurable cryptographic engine into the unused silicon area of a state-of-the-ar... » read more

Low-Latency Interconnect for Close-Coupled On-Chip Communication With Error Correction Code Protection (ETH Zurich)


A new technical paper titled "relOBI: A Reliable Low-latency Interconnect for Tightly-Coupled On-chip Communication" was published by researchers at ETH Zurich. Excerpt "On-chip communication is a critical element of modern systems-on-chip (SoCs), allowing processor cores to interact with memory and peripherals. Interconnects require special care in radiation-heavy environments, as any soft... » read more

Noise Margin Enhancing ULVR SRAM Cell (Tokyo Institute of Technology)


A new technical paper titled "A New Ultralow-Voltage Retention SRAM Cell Enhancing Noise Immunity" was published by researchers at the Tokyo Institute of Technology. Excerpt "A new ultralow-voltage retention (ULVR) SRAM cell is proposed, which can highly enhance the noise margin (NM) for the ULVR mode at ultralow voltages (VUL). This 8T cell is configured with newtype Schmitt-trigger (ST) i... » read more

Epitaxial Growth Of Up To 120 Si/SiGe Bilayers In View of 3D DRAM Applications (imec, Ghent Univ.)


A new technical paper titled "Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications" was published by researchers at imec and Ghent University. Abstract "Epitaxially grown Si/Si1−xGex multi-stacks with ≥100 bilayers (≥200 sublayers) are being considered for three dimensionally vertically stacked dynamic rando... » read more

3DICs: Atomic-Scale Behavior of Electromigration in Cu−Cu Joints (NYCU, ITRI)


A new technical paper titled "In Situ Atomic-Scale Investigation of Electromigration Behavior in Cu–Cu Joints at High Current Density" was published by researchers at National Yang Ming Chiao Tung University (NYCU) and the Industrial Technology Research Institute (ITRI). Excerpt "Electromigration (EM) poses significant challenges to the reliability of miniaturized devices, particularly th... » read more

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