Potential Of 2D Semi-Metallic PtSe₂ As Source/Drain Contacts For 2D Material FETs

A technical paper titled “Improvement of Contact Resistance and 3D Integration of 2D Material Field-Effect Transistors Using Semi-Metallic PtSe₂ Contacts” was published by researchers at Yonsei University, Korea Advanced Institute of Science and Technology (KAIST), Lincoln University College, Korea Institute of Science and Technology (KIST), and Ewha Womans University.

Abstract:

“In this work, the potential of 2D semi-metallic PtSe₂ as source/drain (S/D) contacts for 2D material field-effect-transistors (FETs) through theoretical and experimental investigations, is explored. From the density functional theory (DFT) calculations, semi-metallic PtSe₂ can inject electrons and holes into MoS₂ and WSe₂, respectively, indicating the feasibility of PtSe₂ contacts for both n- and p-metal-oxide-semiconductor FETs (n-/p-MOSFETs). Indeed, experimentally fabricated flake-level MoS₂ n-MOSFETs and WSe₂ p-MOSFETs exhibit a significant reduction in contact resistance with semi-metallic PtSe₂ contacts compared to conventional Ti/Au contacts. To demonstrate the applicability for large-area electronics, MoS₂ n-MOSFETs are fabricated with semi-metallic PtSe₂ contacts using chemical vapor deposition-grown MoS₂ and PtSe₂ films. These devices exhibit outstanding performance metrics, including high on-state current (≈10⁻⁷ A/µm) and large on/off ratio (>10⁷). Furthermore, by employing these high-performance MoS₂ n-MOSFETs, vertically stacked n-MOS inverters are successfully demonstrated, suggesting that 3D integration of 2D material FETs is possible using semi-metallic PtSe₂ contacts.”

Find the technical paper here. Published August 2024.

Seo, Jae Eun, Minseung Gyeon, Jisoo Seok, Sukhyeong Youn, Tanmoy Das, Seongdae Kwon, Tae Soo Kim et al. “Improvement of Contact Resistance and 3D Integration of 2D Material Field‐Effect Transistors Using Semi‐Metallic PtSe2 Contacts.” Advanced Functional Materials: 2407382.