A new technical paper titled “Simulation of Vertically Stacked 2-D Nanosheet FETs” was published by researchers at Università di Pisa and TU Wien.
Abstract
“We present a simulation study of vertically stacked 2-D nanosheet field-effect transistors (NSFETs). The aim of this investigation is to assess the performance and potential of FinFET alternatives, i.e., gate-all-around (GAA) nanosheet FET at the ultimate nanosheet thickness, using 2-D materials (2DMs). In particular, our numerical study specifically explores the potential of multilayer vertically stacked GAA MoS2 FETs, considering different geometries and device parameters (e.g., number of stacked nanosheets, spacer dimensions, doping, and so on) with the aim of providing guidelines for obtaining high-performance devices. Sources of nonideality that have been considered are the effects of contact resistance and line-edge roughness (LER), which significantly affect the overall performance of NSFETs. Finally, circuit performance has been benchmarked by calculating the energy per switching and worst case delay of a 32-bit full adder circuit.”
Find the technical paper here. February 2025.
P. K. Dubey, D. Marian, A. Toral-Lopez, T. Knobloch, T. Grasser and G. Fiori, “Simulation of Vertically Stacked 2-D Nanosheet FETs,” in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2025.3533474.
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