The Bumpy Road To 10nm FinFETs

By Mark LaPedus - 21 May, 2015 - Comments: 0

Foundry vendors are currently ramping up their 16nm/14nm [getkc id="185" kc_name="finFET"] processes in the market. Vendors are battling each other for business in the arena, although the migration from planar to finFETs is expected to be a slow and expensive process. Still, despite the challenges at 16nm/14nm, vendors are gearing up for the next battle in the foundry business—the 10nm nod... » read more

How Hard Is FD-SOI Design?

By Ann Mutschler - 21 May, 2015 - Comments: 0

Fully-depleted silicon-on-insulator ([getkc id="220" kc_name="FD-SOI"]) manufacturing technology reached of point of readiness for mass production at the end of March. Along with that, it’s now clear that while there are some impacts on the design flow, those impacts are not game changers. For one thing, the tools required are the same ones currently used for 28nm planar bulk CMOS. The onl... » read more

Addressing Thin Film Thickness Metrology Challenges Of 14nm BEOL Layers

By KLA - 21 May, 2015 - Comments: 0

This paper describes a method to effectively monitor the film stack at different metal CMP process steps using a spectroscopic ellipsometer metrology tool. By proper modeling of the Cu dispersion and simulating the underlayer film information underneath the Cu pad, a single measurement recipe was developed which can be used to monitor each process step in the metal CMP process with stable and r... » read more

10nm Fab Watch

By Mark LaPedus - 21 May, 2015 - Comments: 1

When will the 10nm logic node happen? Analysts believe that foundry vendors will move into 10nm finFET volume production around 2017. Still others say the 10nm finFET ramp could take place anywhere from 2018 to 2020. The predictions are all over the map. One way to predict the timing, progress and demand for 10nm is simple: Follow the fabs. In fact, Intel, Samsung, TSMC and GlobalFound... » read more

Tech Talk: 14nm

By Ed Sperling - 21 May, 2015 - Comments: 0

Tamer Ragheb, digital design methodology technical lead at GlobalFoundries about what's changed with 14nm finFETs, including coloring with double patterning, new corners, Miller Effects, timing issues and variability. [youtube vid=Yk6jSKCtsjU] » read more

One-On-One: Thomas Caulfield

By Mark LaPedus - 21 May, 2015 - Comments: 0

Semiconductor Engineering sat down to talk about fabs, process technology and the equipment industry with Thomas Caulfield, senior vice president and general manager of Fab 8 at [getentity id="22819" comment="GlobalFoundries"]. Located in Saratoga County, N.Y., Fab 8 is GlobalFoundries’ most advanced 300mm wafer fab. What follows are excerpts of that discussion. SE: Last year, GlobalFoundr... » read more

IP Market Shifts Direction

By Ed Sperling - 20 May, 2015 - Comments: 0

Semiconductor Engineering sat down to discuss intellectual property changes and challenges with Patrick Soheili, vice president of product management and corporate development at [getentity id="22242" e_name="eSilicon"]; Navraj Nandra, senior director of marketing for DesignWare analog and MSIP at [getentity id="22035" e_name="Synopsys"]; Kurt Shuler, vice president of marketing at [getentity i... » read more

Rethinking Power

By Ed Sperling - 14 May, 2015 - Comments: 0

Power typically has been the last factor to be considered in the PPA equation, and it usually was somebody else's problem. Increasingly it's everyone's problem, and EDA companies are beginning to look at power differently than in the past. While the driving forces vary by market and by process node, the need to save energy at every node and in almost all designs is pervasive. In the server m... » read more

Trouble Ahead For IP industry?

By Brian Bailey - 14 May, 2015 - Comments: 0

[getkc id="106" kc_name="Power-aware design"] has risen from an afterthought to a primary design constraint for some design types. Initially it was smart phones and other battery operated devices. It has consistently expanded into additional areas including those plugged into the wall and those plugged into the grid. Some parts of the world are imposing restrictions on the power that a device c... » read more

FD-SOI Vs. FinFETs

By Ed Sperling - 13 May, 2015 - Comments: 3

Semiconductor Engineering sat down to compare the benefits, risks and challenges of moving to finFETs compared with fully depleted silicon on insulator ([getkc id="220" kc_name="FD-SOI"]) with Philippe Magarshack, group vice president for technology R&D at [getentity id="22331" comment="STMicroelectronics"]; Marco Brambilla, director of engineering at [getentity id="22150" e_name="Synapse D... » read more

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