tag: 5nm

Self-Aligned Block And Fully Self-Aligned Via For iN5 Metal 2 Self-Aligned Quadruple Patterning
By Coventor - 29 Mar, 2018 - Comments: 0

This paper assesses Self-Aligned Block (SAB) and Fully Self-Aligned Via (FSAV) approaches to patterning using a iN5 (imec node 5 nm) vehicle and Metal 2 Self-Aligned Quadruple Patterning. We analyze SAB printability in the lithography process using process optimization, and demonstrate the effect of SAB on patterning yield for a (8 M2 lines x 6 M1 lines x 6 Via) structure. We show that FSAV, co... » read more

Improving Patterning Yield At The 5nm Semiconductor Node
By Benjamin Vincent - 29 Mar, 2018 - Comments: 0

Engineering decisions are always data-driven. As scientists, we only believe in facts and not in intuition or feelings. At the manufacturing stage, the semiconductor industry is eager to provide data and facts to engineers based upon metrics such as the quantity of wafers produced per hour and sites/devices tested on each of those wafers. The massive quantity of data generated in semiconduct... » read more

EUV’s New Problem Areas
By Mark LaPedus - 19 Mar, 2018 - Comments: 2

Extreme ultraviolet (EUV) lithography is moving closer to production, but problematic variations—also known as stochastic effects—are resurfacing and creating more challenges for the long-overdue technology. GlobalFoundries, Intel, Samsung and TSMC hope to insert [gettech id="31045" comment="EUV"] lithography into production at 7nm and/or 5nm. But as before, EUV consists of several compo... » read more

DSA Re-Enters Litho Picture
By Mark LaPedus - 15 Mar, 2018 - Comments: 1

By Mark LaPedus and Ed Sperling Directed self-assembly (DSA) is moving back onto the patterning radar screen amid ongoing challenges in lithography. Intel continues to have a keen interest in [gettech id="31046" t_name="DSA"], while other chipmakers are taking another hard look at the technology, according to multiple industry sources. DSA isn't like a traditional [getkc id="80" kc_name="... » read more

Why All Nodes Won’t Work
By Ed Sperling - 08 Mar, 2018 - Comments: 4

A flood of new nodes, half-nodes and every number in between is creating confusion among chipmakers. While most say it's good to have choices, it's not clear which or how many of those choices are actually good. At issue is which [getkc id="43" kc_name="IP"] will be available for those nodes, how that IP will differ from other nodes in terms of power, performance, area and sensitivity to a v... » read more

Tech Talk: On-Chip Variation
By Ed Sperling - 01 Mar, 2018 - Comments: 0

Raymond Nijssen, vice president of systems engineering at Achronix, discusses on-chip and process variation at 7nm and 5nm, the role of embedded FPGAs, and how to reduce margin and pessimistic designs. https://youtu.be/LQnw_3H9soQ » read more

Tech Talk: 5/3nm Parasitics
By Ed Sperling - 22 Feb, 2018 - Comments: 0

Ralph Iverson, principal R&D engineer at Synopsys, talks about parasitic extraction at 5/3nm and what to expect with new materials and gate structures such as gate-all-around FETs and vertical nanowire FETs. https://youtu.be/24C6byQBkuI » read more

New Nodes, Materials, Memories
By Ed Sperling - 15 Feb, 2018 - Comments: 0

Ellie Yieh, vice president and general manager of Advanced Product Technology Development at [getentity id="22817" e_name="Applied Materials"], and head of the company's Maydan Technology Center, sat down with Semiconductor Engineering to talk about challenges, changes and solutions at advanced nodes and with new applications. What follows are excerpts of that conversation. SE: How far can w... » read more

Chip Aging Accelerates
By Ed Sperling - 14 Feb, 2018 - Comments: 1

Reliability is becoming an increasingly important proof point for new chips as they are rolled out in new markets such as automotive, cloud computing and industrial IoT, but actually proving that a chip will function as expected over time is becoming much more difficult. In the past, reliability generally was considered a foundry issue. Chips developed for computers and phones were designed ... » read more

New Thermal Issues Emerge
By Ann Mutschler - 12 Feb, 2018 - Comments: 0

Thermal monitoring is becoming more critical as gate density continues to increase at each new node and as chips are developed for safety critical markets such as automotive. This may sound counterintuitive because the whole point of device scaling is to increase gate density. But at 10/7 and 7/5nm, static current leakage is becoming a bigger issue, raising questions about how long [getkc id... » read more

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