tag: EUV lithography

High-NA EUVL: the next major step in lithography
By Technical Paper Link - 05 Oct, 2021 - Comments: 0

"In the course of 2025, we expect to see the introduction of the first high-NA extreme ultraviolet (EUV) lithography equipment in high-volume manufacturing environments. These next-generation lithography systems will be key to advance Moore’s Law towards the logic 2nm technology generation and beyond. In this article, imec scientists and engineers involved in preparing this major engine... » read more

Underlayer Optimization Method For EUV Lithography
By Brewer Science - 21 Jul, 2021 - Comments: 0

Photoresist and underlayer combine to serve a central role in EUVL for patterning. Layers will be very thin in future, because high numerical aperture (NA) and tight pitches will require very thin layers in the lithography stack. This thinness will make chemical interactions at the photoresist-underlayer interface more common. Adhesion between these layers will be critical to overcome pattern c... » read more

Finding, Predicting EUV Stochastic Defects
By Mark LaPedus - 17 Jun, 2021 - Comments: 0

Several vendors are rolling out next-generation inspection systems and software that locates problematic defects in chips caused by processes in extreme ultraviolet (EUV) lithography. Each defect detection technology involves various tradeoffs. But it’s imperative to use one or more of them in the fab. Ultimately, these so-called stochastic-induced defects caused by EUV can impact the perf... » read more

Improvement Of EUV Si Hardmask Performance Through Wet Chemistry Functionalization
By Brewer Science - 20 May, 2021 - Comments: 0

In EUV lithography, spin-on silicon hardmasks have been widely used not only as etch transfer layers, but also as assist layers to enhance the lithographic performance of resist. In this study, we demonstrate a novel approach to functionalize spin-on silicon hardmasks by hybridizing them with functional groups through a sol-gel approach. By varying the concentration and type of the functional g... » read more

Survey: eBeam Initiative Luminaries (formerly Perceptions) Survey Results
By eBeam Initiative - 18 Nov, 2020 - Comments: 0

Survey of 77 industry luminaries across 42 different companies in July 2020 says net neutral COVID-19 business impact by 2021, with 24% positive vs 20% negative predictions. Click here to view the survey results. » read more

Manufacturing Bits: Aug. 10
By Mark LaPedus - 10 Aug, 2020 - Comments: 0

EUV mask cleaning process TSMC has developed a new dry-clean technology for photomasks used in extreme ultraviolet (EUV) lithography, a move that appears to solve some major problems in the fab. TSMC and Samsung are in production with EUV lithography at advanced nodes, but there are still several challenges with the photomasks and other parts of the technology. Using 13.5nm wavelengths, EUV... » read more

Manufacturing Bits: June 8
By Mark LaPedus - 08 Jun, 2020 - Comments: 0

Maskless EUV lithography At this week’s 2020 EUVL Workshop, KJ Innovation will present more details about its efforts to develop a maskless extreme ultraviolet (EUV) lithography technology. Still in R&D, KJ Innovation’s maskless EUV technology involves a high-numerical aperture (high-NA) system with 2 million individual write beams. The 0.55 NA technology is targeted for direct-write l... » read more

Manufacturing Bits: June 2
By Mark LaPedus - 02 Jun, 2020 - Comments: 0

EUV lithography in outer space The U.S. space program made history on May 31, 2020, when NASA astronauts Robert Behnken and Douglas Hurley aboard SpaceX’s Crew Dragon spacecraft arrived at the International Space Station (ISS). This is the first time a commercial spacecraft has delivered astronauts to the ISS. The ISS serves as a research lab for companies, government agencies and universiti... » read more

Super Planarizing Material For Trench And Via Arrays
By Brewer Science - 21 May, 2020 - Comments: 0

As device design scales and becomes more complex, fine control of patterning and transfer steps is integral. Planarization of deep trenches and via arrays has always been a challenge. Aspect ratios continue to increase while critical dimensions shrink, and typical trench fill schemes are no longer able to meet the fill and planarization requirements. Traditional design of spin-on carbon (SOC) m... » read more

EUV Remains Elusive
By Ed Sperling - 31 Jul, 2012 - Comments: 0

By David Lammers Intel’s decision to invest as much as $4.1 billion in ASML has raised overall confidence levels in EUV lithography, and should allow the Dutch lithography vendor to funnel more funds into the stubbornly difficult effort to raise the EUV source power. ASML has said it needs to reach 250 Watts of average source power to achieve the 125 wph throughputs sought by its early cu... » read more

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