Making Chips At 3nm And Beyond

By Mark LaPedus and Ed Sperling - 16 Apr, 2020 - Comments: 4

Select foundries are beginning to ramp up their new 5nm processes with 3nm in R&D. The big question is what comes after that. Work is well underway for the 2nm node and beyond, but there are numerous challenges as well as some uncertainty on the horizon. There already are signs that the foundries have pushed out their 3nm production schedules by a few months due to various technical issu... » read more

Challenges Grow For Finding Chip Defects

By Mark LaPedus - 19 Sep, 2019 - Comments: 5

Several equipment makers are developing or ramping up a new class of wafer inspection systems that address the challenges in finding defects in advanced chips. At each node, the feature sizes of the chips are becoming smaller, while the defects are harder to find. Defects are unwanted deviations in chips, which impact yield and performance. The new inspection systems promise to address the c... » read more

Test Chips Play Larger Role At Advanced Nodes

By Ann Mutschler - 27 Jun, 2019 - Comments: 0

Test chips are becoming more widespread and more complex at advanced process nodes as design teams utilize early silicon to diagnose problems prior to production. But this approach also is spurring questions about whether this approach is viable at 7nm and 5nm, due to the rising cost of prototyping advanced technology, such as mask tooling and wafer costs. Semiconductor designers have long b... » read more

New BEOL/MOL Breakthroughs?

By Mark LaPedus - 15 Jun, 2017 - Comments: 1

Chipmakers are moving ahead with transistor scaling at advanced nodes, but it's becoming more difficult. The industry is struggling to maintain the same timeline for contacts and interconnects, which represent a larger portion of the cost and unwanted resistance in chips at the most advanced nodes. A leading-edge chip consists of three parts—the transistor, contacts and interconnects. The ... » read more

Battling Fab Cycle Times

By Mark LaPedus - 16 Feb, 2017 - Comments: 9

The shift from planar devices to finFETs enables chipmakers to scale their processes and devices from 16nm/14nm and beyond, but the industry faces several challenges at each node. Cost and technical issues are the obvious challenges. In addition, cycle time—a key but less publicized part of the chip-scaling equation—also is increasing at every turn, creating more angst for chipmakers and... » read more

How Many Nanometers?

By Ed Sperling - 20 Oct, 2016 - Comments: 0

What’s the difference between a 10nm and a 7nm chip? That should be a straightforward question. Math, after all, is the only pure science. But as it turns out, the answer is hardly science—even if it is all about numbers. Put in perspective, at 65nm, companies defined the process node by the half pitch of the first metal layer. At 40/45nm, with the cost and difficulty of developing n... » read more

Creating An Accurate FEOL CMP Model

By Jeff Wilson - 20 Oct, 2016 - Comments: 0

By Ruben Ghulghazaryan, Jeff Wilson, and Ahmed AbouZeid For decades, semiconductor manufacturers have used chemical-mechanical polishing (CMP) as the primary technique for the smoothing and leveling (planarization) of dielectrics and metal layers. CMP modeling allows design and manufacturing teams to find and fix potential planarization issues before the actual CMP process is applied to a ... » read more

FinFET Front-End-of-Line (FEOL) Process Integration With SEMulator3D

By Coventor - 19 Oct, 2016 - Comments: 0

Purely geometric scaling of transistors ended around the 90-nanometer (nm) era. Since then, most power/performance and area/cost improvements have come from structural and material innovations. Silicon-on-Insulator (SOI), first “partially depleted” and more recently “fully depleted” as well as embedded stressors, High-K / Metal-Gate (HKMG) and now FinFETs are examples of technology inno... » read more

Interconnect Challenges Rising

By Mark LaPedus - 27 Jun, 2016 - Comments: 1

Chipmakers are ramping up their 14nm finFET processes, with 10nm and 7nm slated to ship possibly later this year or next. At 10nm and beyond, IC vendors are determined to scale the two main parts of the [getkc id="185" kc_name="finFET"] structure—the transistor and interconnects. Generally, transistor scaling will remain challenging at advanced nodes. And on top of that, the interconnects ... » read more

Next Challenge: Contact Resistance

By Mark LaPedus - 23 Jun, 2016 - Comments: 0

In chip scaling, there is no shortage of challenges. Scaling the finFET transistor and the interconnects are the biggest challenges for current and future devices. But now, there is another part of the device that’s becoming an issue—the contact. Typically, the contact doesn’t get that much attention, but the industry is beginning to worry about the resistance in the contacts, or conta... » read more

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tag: FEOL

Making Chips At 3nm And Beyond

Challenges Grow For Finding Chip Defects

Test Chips Play Larger Role At Advanced Nodes

New BEOL/MOL Breakthroughs?

Battling Fab Cycle Times

How Many Nanometers?

Creating An Accurate FEOL CMP Model

FinFET Front-End-of-Line (FEOL) Process Integration With SEMulator3D

Interconnect Challenges Rising

Next Challenge: Contact Resistance

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