Ferroelectric Memories Answer Call For Non-Volatile Alternatives


As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and the stability of flash memory. Changing the polarization of ferroelectric domains is extremely fast, and the polarization remains stable without power for years, if not decades. FeFETs, one of ... » read more

Sweeping Changes For Leading-Edge Chip Architectures


Chipmakers are utilizing both evolutionary and revolutionary technologies to achieve orders of magnitude improvements in performance at the same or lower power, signaling a fundamental shift from manufacturing-driven designs to those driven by semiconductor architects. In the past, most chips contained one or two leading-edge technologies, mostly to keep pace with the expected improvements i... » read more

Research Bits: August 29


Resistive switching with hafnium oxide Researchers from the University of Cambridge, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo used hafnium oxide to build a resistive switching memory device that processes data in a similar way as the synapses in the human brain. At the atomic level, hafnium oxide has no structure, with the hafni... » read more

Predicting The Future For Semiconductors


Is it possible to predict the future? Of course not. We all make projections of what happened in the past, where they are now, and the implications for the future. We bias that in various ways and think we are making some astounding revelation, which is highly unlikely to become true. Of course, by luck, some people get it right and they are bestowed with grand accolades and awards. The likelih... » read more

Research Bits: August 22


Photonic memory Researchers from Zhejiang University, Westlake University, and the Chinese Academy of Sciences developed a 5-bit photonic memory capable of fast volatile modulation and proposed a solution for a nonvolatile photonic network supporting rapid training. This was made possible by integrating the low-loss phase-change material (PCM) antimonite (Sb2S3) into a silicon photonic plat... » read more

Power Supply Noise Effects On Jitter In Clock Synchronous Systems With Emphasis On Memory Interfaces


Power Supply Noise Effects on Jitter in Clock Synchronous Systems with Emphasis on LPDDR5X, DDR5 and HBM3 In today's fast-paced digital world, the performance and capacity of high-speed memory has become crucial for a wide range of applications, from personal computing devices to data centers and high-performance computing systems. Designers face challenges in optimizing their designs ... » read more

Generative AI Training With HBM3 Memory


One of the biggest, most talked about application drivers of hardware requirements today is the rise of Large Language Models (LLMs) and the generative AI which they make possible.  The most well-known example of generative AI right now is, of course, ChatGPT. ChatGPT’s large language model for GPT-3 utilizes 175 billion parameters. Fourth generation GPT-4 will reportedly boost the number of... » read more

Low Density Of LPDDR4x DRAM — The Best Choice For Edge AI


Edge AI computes the data as close as possible to the physical system. The advantage is that the processing of data does not require a connected network. The computation of data happens near the edge of a network, where the data is being developed, instead of in a centralized data-processing center. One of the biggest benefits of edge AI is the ability to secure real-time results for time-sensi... » read more

Changes In Memory Design


An explosion of data in automotive, cloud, and AI are altering the fundamentals of memory design. One size no longer fits all, as memory is used for a broader set of applications, from automotive and cloud to consumer devices. Anand Theruvengadam, director of product management at Synopsys, talks about the impact of big data applications on density, memory stacking, and growing concerns about r... » read more

Resistive Switching Memory Based on Thin-Film Design of Amorphous Hafnium Oxide (Cambridge & Others)


A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge, Linköping University, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo. Abstract: "A design concept of phase-separated amorphous nano... » read more

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