tag: memory

Research Bits: August 29
By Jesse Allen - 29 Aug, 2023 - Comments: 0

Resistive switching with hafnium oxide Researchers from the University of Cambridge, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo used hafnium oxide to build a resistive switching memory device that processes data in a similar way as the synapses in the human brain. At the atomic level, hafnium oxide has no structure, with the hafni... » read more

Predicting The Future For Semiconductors
By Brian Bailey - 24 Aug, 2023 - Comments: 1

Is it possible to predict the future? Of course not. We all make projections of what happened in the past, where they are now, and the implications for the future. We bias that in various ways and think we are making some astounding revelation, which is highly unlikely to become true. Of course, by luck, some people get it right and they are bestowed with grand accolades and awards. The likelih... » read more

Research Bits: August 22
By Jesse Allen - 22 Aug, 2023 - Comments: 0

Photonic memory Researchers from Zhejiang University, Westlake University, and the Chinese Academy of Sciences developed a 5-bit photonic memory capable of fast volatile modulation and proposed a solution for a nonvolatile photonic network supporting rapid training. This was made possible by integrating the low-loss phase-change material (PCM) antimonite (Sb2S3) into a silicon photonic plat... » read more

Power Supply Noise Effects On Jitter In Clock Synchronous Systems With Emphasis On Memory Interfaces
By Synopsys - 09 Aug, 2023 - Comments: 0

Power Supply Noise Effects on Jitter in Clock Synchronous Systems with Emphasis on LPDDR5X, DDR5 and HBM3 In today's fast-paced digital world, the performance and capacity of high-speed memory has become crucial for a wide range of applications, from personal computing devices to data centers and high-performance computing systems. Designers face challenges in optimizing their designs ... » read more

Generative AI Training With HBM3 Memory
By Frank Ferro - 20 Jul, 2023 - Comments: 0

One of the biggest, most talked about application drivers of hardware requirements today is the rise of Large Language Models (LLMs) and the generative AI which they make possible.  The most well-known example of generative AI right now is, of course, ChatGPT. ChatGPT’s large language model for GPT-3 utilizes 175 billion parameters. Fourth generation GPT-4 will reportedly boost the number of... » read more

Low Density Of LPDDR4x DRAM — The Best Choice For Edge AI
By Winbond - 05 Jul, 2023 - Comments: 0

Edge AI computes the data as close as possible to the physical system. The advantage is that the processing of data does not require a connected network. The computation of data happens near the edge of a network, where the data is being developed, instead of in a centralized data-processing center. One of the biggest benefits of edge AI is the ability to secure real-time results for time-sensi... » read more

Changes In Memory Design
By Ed Sperling - 29 Jun, 2023 - Comments: 0

An explosion of data in automotive, cloud, and AI are altering the fundamentals of memory design. One size no longer fits all, as memory is used for a broader set of applications, from automotive and cloud to consumer devices. Anand Theruvengadam, director of product management at Synopsys, talks about the impact of big data applications on density, memory stacking, and growing concerns about r... » read more

Resistive Switching Memory Based on Thin-Film Design of Amorphous Hafnium Oxide (Cambridge & Others)
By Technical Paper Link - 28 Jun, 2023 - Comments: 0

A technical paper titled “Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity” was published by researchers at University of Cambridge, Linköping University, Purdue University, University College London, Los Alamos National Laboratory, and University at Buffalo. Abstract: "A design concept of phase-separated amorphous nano... » read more

Improving DRAM Device Performance Through Saddle Fin Process Optimization
By Taeyon (TY) Oh - 15 Jun, 2023 - Comments: 0

As DRAM technology nodes have scaled down, access transistor issues have been highlighted due to weak gate controllability. Saddle Fins with Buried Channel Array Transistors (BCAT) have subsequently been introduced to increase channel length, prevent short channel effects, and increase data retention times [1]. However, at technology nodes beyond 20nm, securing sufficient device performance (su... » read more

LPDDR5X: High Bandwidth, Power Efficient Performance For Mobile & Beyond
By Vinitha Seevaratnam - 08 Jun, 2023 - Comments: 0

Looking back over recent history in the memory landscape, we can clearly see a trend of new applications growing sufficiently large enough to command the creation of new memory technologies tailored to their specific needs. We saw this with the creation of GDDR for graphics and later HBM for AI/ML applications. Low-Power Double Data Rate (LPDDR) emerged as a specialized memory designed for mobi... » read more

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