tag: SiC

Manufacturing Bits: Dec. 23
By Mark LaPedus - 23 Dec, 2019 - Comments: 0

Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

Where Technology Breakthroughs Are Needed
By Mark LaPedus - 23 Dec, 2019 - Comments: 2

After years of delays, extreme ultraviolet (EUV) lithography is finally in production at the 7nm logic node with 5nm in the works. EUV, a next-generation lithography technology, certainly will help chipmakers migrate to the next nodes. But EUV doesn’t solve every problem. Nor does it address all challenges in the semiconductor industry. Not by a long shot. To be sure, the industry needs... » read more

Replenishing The Grid With A SiC-Based Bi-Directional On-Board Charger
By Wolfspeed, a Cree Company - 16 Dec, 2019 - Comments: 0

Range anxiety and charger availability have long been the main hurdles to the adoption of electric vehicles. But even as car makers have demonstrated their batteries can go longer distances and charging stations have proliferated, challenges with EV charging remain as well as opportunities to load balance power grids. The migration to electric vehicles also means looking at how they can bett... » read more

Accelerating Silicon Carbide Power Electronics Devices Into High Volume Manufacturing With Mechanical Dicing System
By Veeco - 16 Dec, 2019 - Comments: 0

Silicon carbide (SiC) is a wideband gap semiconductor material that has huge potential to enrich our lives by enabling better technology with improved connectivity and efficiency. It offers many advantages over common silicon (Si) for power applications as it can be doped much higher than silicon to achieve optimal blocking voltage. In addition, SiC high thermal conductivity characteristic enab... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 22 Nov, 2019 - Comments: 0

Chipmakers For some time, Intel has experienced supply constraints and shortages for its 14nm chip products. Apparently, the company is still having issues with both 14nm and 10nm. “Despite our best efforts, we have not yet resolved this challenge,” according to a statement from Michelle Johnston Holthaus, executive vice president and general manager of the Sales, Marketing and Communicati... » read more

RF GaN Gains Steam
By Mark LaPedus - 21 Nov, 2019 - Comments: 0

Wide-bandgap semiconductors are hot topics these days. One wide-bandgap semi type--silicon carbide (SiC)--is the talk of the town and is gaining steam in electric vehicles and other systems. But let’s not forget about gallium nitride (GaN). GaN, a binary III-V material, has 10 times the breakdown field strength with double the electron mobility than silicon. GaN is used for LEDs, power ... » read more

New Trends In Wafer Bonding
By Katherine Derbyshire - 21 Nov, 2019 - Comments: 0

Unable to scale horizontally, due to a combination of lithography delays and power constraints, manufacturers are stacking devices vertically. This has become essential as the proliferation of mobile devices drives demand for smaller circuit footprints, but the transition isn't always straightforward. Three-dimensional integration schemes take many forms, depending on the required interconne... » read more

Power/Performance Bits: Oct. 29
By Jesse Allen - 29 Oct, 2019 - Comments: 0

Chip scanning Researchers at the University of Southern California and the Paul Scherer Institut in Switzerland developed an x-ray technique to non-destructively scan chips to make sure they conform to specifications. Such a system could be used to identify manufacturing defects or malicious alterations, the team said. Called ptychographic x-ray laminography, the technique utilizes x-rays f... » read more

New SiC Power Modules Deliver Greater Power Densities In Smaller Packages Than Si IGBTs
By Wolfspeed, a Cree Company - 16 Oct, 2019 - Comments: 0

With the shift toward electrical power for a wide range of applications, including power generation, energy storage, and transportation, comes the need to build higher performance electrical conversion and control systems to fuel the future of electric-powered systems. To do so, there is a greater demand for more compact, higher power density, and high temperature operating power modules. Un... » read more

Design Comparison of SiC MOSFETs for Linear-Mode Operation
By Technical Paper Link - 02 Oct, 2019 - Comments: 0

Source: US Army Research Lab Authors: Heather O'Brien, Damian Urciuoli, Aderinto Ogunniyi, Brett Hull August 2019 "Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a voltage-blocking rating up to 1200 V. The device design parameters, such as chan... » read more

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