Gearing Up For Next-Gen Power Semis


After years in R&D, several vendors are moving closer to shipping power semiconductors and other products based on next-generation wide-bandgap technologies. These devices leverage the properties of new materials, such as aluminum nitride, diamond, and gallium oxide, and they are also utilized in different structures, such as vertical gallium-nitride power devices. But while many of thes... » read more

Gate Drive Solutions For CoolGaN 600 V HEMTs


This paper explains the gate drive requirements for Infineon’s CoolGaN 600 V e-mode HEMTs. Various driving solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and non-isolated drivers could be an exciting alternative. Practical applicat... » read more

Going Vertical With GaN Devices


Gallium nitride has long been on the horizon for a variety of uses in semiconductors, but implementing this on a commercial scale has been relatively slow due to a variety of technical hurdles. That may be about to change. The wide bandgap of GaN makes it particularly attractive material for power conversion applications. Still, actually realizing its benefits in commercial devices has been ... » read more

Increasing The Conductive Density Of Packaging


Wide bandgap (WBG) semiconductor technologies have created new challenges and opportunities for power packages. Developments such as silicon carbide (SiC) and gallium nitride (GaN), have a higher figure of merit (FOM) compared to silicon MOSFETs and have extended the efficiency, output power and/or switching frequency range and operating temperature range for power electronics. With lower lo... » read more

Power Converter Chip Research Booms


Power electronics are booming, fueled by demand ranging from induction chargers for wearable and portable electronics, to charging stations for electric vehicles. An estimated 80% of all U.S. electricity will pass through some form of power converter by 2030, said Yogesh Ramadass, director of power management at Texas Instruments' Kilby Labs. Transportation applications, in particular, deman... » read more

48V Applications Drive Power IC Package Options


The manufacturing process and die get most of the attention, but the packaging plays an important part in enabling and limiting performance, manufacturability, particularly when it comes to reliability of power devices. Given the wide range of underlying semiconductor power-device technologies — “basic” silicon, wide-bandgap silicon carbide (SiC) and gallium nitride (GaN), power levels... » read more

Improving Reliability For GaN And SiC


Suppliers of gallium nitride (GaN) and silicon carbide (SiC) power devices are rolling out the next wave of products with some new and impressive specs. But before these devices are incorporated in systems, they must prove to be reliable. As with previous products, suppliers are quick to point out that the new devices are reliable, although there are some issues that can occasionally surface... » read more

Power Semi Wars Begin


Several vendors are rolling out the next wave of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC), setting the stage for a showdown against traditional silicon-based devices in the market. Power semiconductors are specialized transistors that incorporate different and competitive technologies like GaN, SiC and silicon. Power semis operate as a switch in high-volt... » read more

Wide Band Gap—The Revolution In Power Semiconductors


New government regulations and industry standards are leading companies to adopt wide bandgap (WBG) power solutions, both to reduce their carbon footprint and to meet increasing demand for higher power systems aimed at electric vehicles, renewable energy, datacenters, and other markets. The automotive industry is one of the biggest markets driving demand for WBG power devices. The European U... » read more

GaN Power Semi Biz Heats Up


The market for devices based on gallium nitride (GaN) technology is heating up amid the push for faster and more power efficient systems. Today, [getkc id="217" kc_name="GaN"] is widely used in the production of LEDs. In addition, it is gaining steam in the radio-frequency (RF) market. And the GaN-based power semiconductor market finally appears ready to take off, after several false starts ... » read more

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