A new technical paper (preprint) titled “Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition” was published by researchers at Johns Hopkins University, Northwestern University, Intel Corporation, Bruker Nano, EUV Tech and Lawrence Berkeley National Lab.
The paper states “This study demonstrates that aZnMIm thin films, previously identified as high-resolution electron beam resists, can also function as negative tone EUV photoresists.” Find the technical paper here. June 2025.
1. Waltz KE, Zhou X, Krull X, Singh S, Mattson E, Miao Y, et al. Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition. ChemRxiv. 2025; doi:10.26434/chemrxiv-2025-s1n4s This content is a preprint and has not been peer-reviewed.
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