Power/Performance Bits: Jan. 10

Antiferromagnetic magnetoelectric RAM Researchers at Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Swiss Nanoscience Institute, and the University of Basel developed a concept for a new, low power memory chip. In particular, the group focused on finding an alternative to MRAM using magnetoelectric antiferromagnets, which are activated by an electrical voltage rather than by a current. "... » read more