Election Security At The Chip Level
By Andy Patrizio - 02 Jan, 2020 - Comments: 3

Technological advances have changed every facet of our lives, from reading to driving to cooking, but one task remains firmly rooted in 20th-century technology — voting. Electronic voting remains doggedly unavailable to most, and almost always unusable to those who have it. For more than a decade, it seems every election is accompanied by numerous reports of voting machine problems. The mo... » read more

A Ferroelectric Semiconductor Field-Effect Transistor
By Technical Paper Link - 31 Dec, 2019 - Comments: 0

Abstract: "Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric sem... » read more

Understanding the Interactions of Workloads and DRAM Types: A Comprehensive Experimental Study
By Technical Paper Link - 31 Dec, 2019 - Comments: 0

Abstract "It has become increasingly difficult to understand the complex interaction between modern applications and main memory, composed of DRAM chips. Manufacturers are now selling and proposing many different types of DRAM, with each DRAM type catering to different needs (e.g., high throughput, low power, high memory density). At the same time, the memory access patterns of prevalent and... » read more

Manufacturing Bits: Dec. 31
By Mark LaPedus - 31 Dec, 2019 - Comments: 0

GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

Power/Performance Bits: Dec. 31
By Jesse Allen - 31 Dec, 2019 - Comments: 0

Three-valued memory Scientists at the Tokyo Institute of Technology and the University of Tokyo developed a new three-valued memory device inspired by solid lithium-ion batteries which could potentially serve as low power consumption RAM. The new device consisted of a stack of three solid layers made of lithium, lithium phosphate, and gold. This stack is essentially a miniature low-capacity... » read more

Improving Algorithms With High-Level Synthesis
By Ann Mutschler - 30 Dec, 2019 - Comments: 0

Most computer algorithms today are developed in high-level languages on general-purpose computers. But someday they may be deployed in embedded systems where the development, verification, and validation of algorithms is done in languages like python, Java, C++, or even numerical frameworks like MatLab. This is the goal of high-level synthesis (HLS), and it aims to solve a fundamental proble... » read more

The Week In Review: Semiconductors
By SE Staff - 27 Dec, 2019 - Comments: 0

The tech-centric NASDAQ index this week broke 9,000, which was a first. Key to the latest run-up were reports of a breakthrough on the trade war with China and continued low interest rates. Chuck Peddle, who helped democratize computing and fuel Moore's Law with his $25 processor chip, passed away last week. Peddle designed the MOS Technology 6502, which was the basis for the KIM-1 single-bo... » read more

What Engineers Are Reading And Watching
By Brian Bailey - 26 Dec, 2019 - Comments: 0

By Brian Bailey And Ed Sperling An important indicator of where the chip industry is heading is what engineers are reading and what videos they are watching. While some subjects remain on top, such as the level of interest in the latest manufacturing technologies, other areas come and go. The stories with the biggest traffic numbers are almost identical to last year. Readers want to know wh... » read more

Manufacturing Bits: Dec. 23
By Mark LaPedus - 23 Dec, 2019 - Comments: 0

Gallium oxide transistors At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage. Crystalline beta gallium oxide is a promising wide bandgap semiconductor material, which is used for power semiconductor applications. Gallium oxide has a large bandgap of... » read more

Where Technology Breakthroughs Are Needed
By Mark LaPedus - 23 Dec, 2019 - Comments: 2

After years of delays, extreme ultraviolet (EUV) lithography is finally in production at the 7nm logic node with 5nm in the works. EUV, a next-generation lithography technology, certainly will help chipmakers migrate to the next nodes. But EUV doesn’t solve every problem. Nor does it address all challenges in the semiconductor industry. Not by a long shot. To be sure, the industry needs... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2026 SMG   |  Terms of Service  |  Privacy Policy