Chip Industry Technical Paper Roundup: Nov. 11

Optimizing CXL; barium titanate for energy storage; ultra-low crosstalk; ReRAM; new bandgap materials; imaging hot photocarrier transfer; memory safety; 3D integration for neuromorphic HW.

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New technical papers recently added to Semiconductor Engineering’s library:

Technical Paper Research Organizations
The Hitchhiker’s Guide to Programming and Optimizing CXL-Based Heterogeneous Systems UC San Diego, Samsung, SK hynix
Understanding surfaces and interfaces in nanocomposites of silicone and barium titanate through experiments and modeling Harvey Mudd College, Sandia National Lab and Air Force Research Laboratory
Ultra-low-crosstalk Silicon Switches Driven Thermally and Electrically University of Cambridge and GlitterinTech
Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM RWTH Aachen University and Forschungszentrum Jülich GmbH
Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design University of Minnesota–Twin Cities and Caltech
Fuzzerfly Effect: Hardware Fuzzing for Memory Safety Technical University of Darmstadt, Texas A&M University and Delft University of Technology
2D materials-based 3D integration for neuromorphic hardware Seoul National University and University of Southern California
Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy UC Santa Barbara and UCLA

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