A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by researchers at Sungkyunkwan University and Alsemy Inc.
“This paper explores the design and optimization of multi-Nanosheet Field-Effect Transistors (mNS-FETs) employing a Transition Metal Dichalcogenide (TMDC) channel, specifically MoS2, for the 0.7 nm technology node using calibrated Technology Computer-Aided Design (TCAD) simulations,” states the paper.
Find the technical paper here. June 2025.
Lee, Junyeol, Hanggyo Jung, Donghyun Jin, and Jongwook Jeon. “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes.” Journal of Science: Advanced Materials and Devices (2025): 100931.
Leave a Reply