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Device Architecture For 2D Material-Based mNS-FETs In Sub-1nm Nodes (Sungkyunkwan Univ., Alsemy)

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A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by researchers at Sungkyunkwan University and Alsemy Inc.

“This paper explores the design and optimization of multi-Nanosheet Field-Effect Transistors (mNS-FETs) employing a Transition Metal Dichalcogenide (TMDC) channel, specifically MoS2, for the 0.7 nm technology node using calibrated Technology Computer-Aided Design (TCAD) simulations,” states the paper.

Find the technical paper here. June 2025.

Lee, Junyeol, Hanggyo Jung, Donghyun Jin, and Jongwook Jeon. “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes.” Journal of Science: Advanced Materials and Devices (2025): 100931.



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