tag: 20nm

28nm FinFETs?
By Brian Bailey - 10 Jul, 2014 - Comments: 5

One star of the upcoming 14/16nm process node is the introduction of the finFET, a fundamentally new transistor that overcomes many of the limitations associated with planar transistors. While these devices are more complex to construct—and the physical extraction processes associated with them is more complex due to an increased number of resistances and capacitances—they are seen as a tra... » read more

Without Moore’s Law: EDA
By Brian Bailey - 26 Jun, 2014 - Comments: 3

Semiconductor Engineering is examining the assertion about the end of Moore’s Law in a number of different ways. The special report, “Will 7nm and 5nm really happen?” looked at the technical aspects related to continuing into finer geometries. “Moore’s Law Tail No Longer Wagging the Dog” asked the question about the economics of people being able to afford to go to the latest node. ... » read more

Atomic Layer Etch Finally Emerges
By Mark LaPedus - 15 May, 2014 - Comments: 1

The migration towards finFETs and other devices at the 20nm node and beyond will require a new array of chip-manufacturing technologies. Multiple patterning, hybrid metrology and newfangled interconnect schemes are just a few of the technologies required for future scaling. In addition, the industry also will require new techniques that can process structures at the atomic level. For example... » read more

Stopping Mask Hotspots Before They Escape The Mask Shop
By eBeam Initiative - 28 Apr, 2014 - Comments: 3

By Aki Fujimura The same types of physics-based issues that have haunted lithography for decades have started to impact mask writing as well. The increasingly small and complex mask shapes specified by optical proximity correction (OPC) that are now required for faithful wafer lithography at 28nm-and-below nodes have given rise to an increase in mask hotspots. Mask hotspots occur when the shap... » read more

One-on-One: Naoya Hayashi
By Mark LaPedus - 20 Mar, 2014 - Comments: 0

Semiconductor Engineering sat down to discuss the current and future challenges in the photomask industry with Naoya Hayashi, research fellow at Dai Nippon Printing (DNP). SE: What are the big challenges for the photomask industry today? Hayashi: There are several challenges. Most of the challenges involve mask complexity. It is also quite difficult to handle the mask data, because it is ... » read more

Interconnect Challenges Grow
By Mark LaPedus - 20 Feb, 2014 - Comments: 0

Qualcomm outlined the technology challenges facing mobile chip suppliers at a recent event. In no particular order, the challenges include the usual suspects—area scaling, power reduction, performance and cost. Another concern for Qualcomm is an often-overlooked part of the equation—the backend-of-the-line (BEOL). In chip production, the BEOL is where the interconnects are formed within ... » read more

28nm Powers TSMC Forward (Part Deux)
By Barry Pangrle - 14 Feb, 2014 - Comments: 0

TSMC’s financial results for the 4th Quarter of 2013 and for the full year were announced just a few weeks ago, with TSMC stating it had again achieved record sales and profits. TSMC continues to own the 28nm foundry market. TSMC a year ago stated plans to have 20nm as its next technology node in production in 2014 and it looks to be delivering on this projected claim with the announcement th... » read more

Executive Viewpoint: Qualcomm On Process Technology
By Mark LaPedus - 23 Jan, 2014 - Comments: 3

Semiconductor Engineering sat down to discuss current and future process technology challenges with Geoffrey Yeap, vice president of technology at Qualcomm. SE: You have pointed out there is a fundamental shift taking place at the 28nm logic node. This is the first node in which mobile chips have been ramped up first within the foundries, ahead of computing-based ICs. Many believe that 28nm ... » read more

Germanium wedge-FETs pry away misfit dislocations
By Katherine Derbyshire - 23 Jan, 2014 - Comments: 1

Any approach to alternative channel integration must consider the lattice mismatch between silicon and other channel materials. Some schemes, such as IMEC’s selective epitaxy, view the lattice mismatch as an obstacle and look for ways to minimize its effects. This point of view certainly has merit: misfit dislocations do significantly degrade transistor performance. Still, back in 2011 Shu-Ha... » read more

Routing Closure Challenges At 28nm And Below
By Jean-Marie Brunet - 03 Jan, 2014 - Comments: 1

As I described in my last article, the gap between router tech files and signoff rule decks at 28 nm and below is generating some serious impacts on tapeout schedules. The mismatch between the router’s simplified tech file and the complex rules that represent the intricate manufacturing requirements at these leading-edge nodes means designs that come from the router “DRC/DFM-clean” will, ... » read more

← Older posts Newer posts →

  • Sponsors

About

Navigation

Connect With Us

Copyright ©2013-2024 SMG   |  Terms of Service  |  Privacy Policy