How GaN On SiC Lowers 5G Base Station Costs

GaN’s higher efficiency at 5G frequencies compared with LDMOS also means a lower operating cost per bit/second and a lower carbon footprint. Wolfspeed, a Cree company, and dominant player in the GaN on SiC device market, estimates that GaN on SiC can save over 200 W of DC power compared to a system that uses LDMOS power amplifiers (PAs) when operated at maximum average power. Continue read... » read more

GaN on SiC: The Only Viable Long-Term Solution for 5G

The 5G wave that’s been building for many years will finally come to shore in 2019. Early (but extremely limited) service rollouts will gain much fanfare and the first round of 5G-enabled devices will begin to hit markets. Wider commercial deployments, however, are still off in the distance and will be a slow but growing wave from 2020 to 2025. CCS Insight predicts 1 billion 5G users globally... » read more

GaN Versus Silicon For 5G

The global race to launch 5G mmWave frequencies could provide a long-anticipated market opportunity for gallium nitride (GaN) as an alternative to silicon. GaN is more power-efficient than silicon for 5G RF. In fact, GaN has been the heir apparent to silicon in 5G power amplifiers for years, especially when it comes to mmWave 5G networks. What makes it so attractive is its ability to efficie... » read more

Reliability Comparison of 28 V – 50 V GaN-on-SiC S-Band and X-Band Technologies

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The intrinsic reliability performance of the 28 V and 40 V technologies, with 400 nm and 250 nm gate length, has been characterized with DC accelerated life test (DC-ALT), f... » read more