tag: IEEE

Generalized Class-E Power Amplifier With Shunt Capacitance And Shunt Filter
By Various Writers - 16 Jul, 2020 - Comments: 0

This paper presents a generalized analysis of the Class-E power amplifier (PA) with a shunt capacitance and a shunt filter, leading to a revelation of a unique design flexibility that can be exploited either to extend the maximum operating frequency of the PA or to allow the use of larger active devices with higher power handling capability. The proposed PA fulfills zero voltage switching (ZVS)... » read more

Manufacturing Bits: June 30
By Mark LaPedus - 30 Jun, 2020 - Comments: 0

1μm pitch wafer bonding At the recent IEEE Electronic Components and Technology Conference (ECTC), Imec presented a paper on a fine-pitch hybrid wafer-to-wafer bonding technology for heterogeneous integration. Imec described a way to enable hybrid bond pitches down to 1μm using a novel Cu/SiCN (copper/silicon-carbon-nitrogen) surface topography. Today, the industry is developing or shi... » read more

Manufacturing Bits: June 16
By Mark LaPedus - 16 Jun, 2020 - Comments: 0

GaN power modules Gallium-nitride (GaN) devices are emerging in several markets, such as power semiconductors and RF. GaN, a binary III-V compound, is a wide-bandgap technology, meaning it is faster and more efficient than silicon-based devices. GaN has 10 times the breakdown field strength with double the electron mobility than silicon. Generally, some GaN vendors don’t use a traditio... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 05 Jun, 2020 - Comments: 0

Materials A major setback has been dealt to the United States’ efforts to develop rare earths. The U.S. is attempting to develop its own supply of rare earths, hoping to reduce its reliance on China. China controls nearly 90% of the world’s rare earths, which are used in magnets and various electronic systems. In April, the U.S. Department of Defense (DoD) awarded two U.S.-based firms, Lyn... » read more

Introducing Nanosheets Into Complementary-Field Effect Transistors (CFETs)
By Benjamin Vincent - 01 Jun, 2020 - Comments: 0

In our November 2019 blog [1], we discussed using virtual fabrication (SEMulator3D) to benchmark different process integration options for Complementary-FET (CFET) fabrication. CFET is a CMOS architecture that was proposed by imec in 2018 [2]. This architecture contains p- and n-MOSFET structures built on top of each other, instead of having them located side-by-side. In our previous blog, we r... » read more

Manufacturing Bits: April 28
By Mark LaPedus - 28 Apr, 2020 - Comments: 1

Gate-all-around reliability The 2020 IEEE International Reliability Physics Symposium (IRPS) will kick off this week, this time as a virtual event. IRPS is a conference that focuses on the latest research in microelectronics reliability. The event starts off with keynotes from Infineon, Intel and Texas Instruments. IRPS also involves a multitude of papers and presentations. On the logi... » read more

Is This The Year Of The Chiplet?
By Ed Sperling - 23 Jan, 2020 - Comments: 2

Customizing chips by choosing pre-characterized — and most likely hardened IP — from a menu of options appears to be gaining ground. It's rare to go to a conference these days without hearing chiplets being mentioned. At a time when end markets are splintering and more designs are unique, chiplets are viewed as a way to rapidly build a device using exactly what is required for a particul... » read more

Week In Review: Manufacturing, Test
By Mark LaPedus - 17 Jan, 2020 - Comments: 0

Fab tools, chips and technologies What happened at the SEMI Industry Strategy Symposium (ISS) this week? The annual three-day conference of executives gave the year’s first comprehensive outlook of the global electronics manufacturing industry. Click here to see the details. CyberOptics has unveiled its new WaferSense Auto Resistance Sensor (ARS) and its CyberSpectrum software. The produc... » read more

Manufacturing Bits: Jan. 7
By Mark LaPedus - 07 Jan, 2020 - Comments: 0

Beyond 5G chips At the recent IEEE International Electron Devices Meeting (IEDM), NTT and the Tokyo Institute of Technology presented a paper on a technology that could enable high-speed wireless devices beyond the 5G standard. Researchers have devised a 300GHz wireless transceiver (TRx) that supports a data rate of more than 100Gb/s. The device is based on a technology called indium phosph... » read more

Manufacturing Bits: Dec. 31
By Mark LaPedus - 31 Dec, 2019 - Comments: 0

GaN-on-SOI power semis At the recent IEEE International Electron Devices Meeting (IEDM), Imec and KU Leuven presented a paper on a gallium-nitride (GaN) on silicon-on-insulator (SOI) technology for use in developing GaN power devices. With GaN-on-SOI technology, researchers have developed a 200-volt GaN power semiconductor device with an integrated driver and fast switching performance. ... » read more

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