Research Bits: Jan. 6


Ultrathin ferroelectric capacitors Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory capacitor stack using scandium-substituted aluminum nitride ((Al,Sc)N) thin films with platinum electrodes. The total thickness is just 30nm: a 20nm ferroelectric layer sandwiched between 5nm platinum top and bottom electrodes. “Previous r... » read more