tag: Coventor

A Benchmark Study Of Complementary-Field Effect Transistor (CFET) Process Integration Options Done By Virtual Fabrication
By Coventor - 01 Jun, 2020 - Comments: 0

Four process flow options for Complementary-Field Effect Transistors (C-FET), using different designs and starting substrates (Si bulk, Silicon-On-Insulator, or Double-SOI), were compared to assess the probability of process variation failures. The study was performed using virtual fabrication techniques without requiring fabrication of any actual test wafers. In the study, Nanosheet-on-Nanoshe... » read more

EUV’s Uncertain Future At 3nm And Below
By Mark LaPedus - 21 May, 2020 - Comments: 5

Several foundries have moved extreme ultraviolet (EUV) lithography into production at both 7nm and 5nm, but now the industry is preparing for the next phase of the technology at 3nm and beyond. In R&D, the industry is developing new EUV scanners, masks and resists for the next nodes. 3nm is slated for 2022, followed by 2nm a year or two later. Nonetheless, it will require massive funding... » read more

New Uses For Manufacturing Data
By Ed Sperling - 12 May, 2020 - Comments: 0

The semiconductor industry is becoming more reliant on data analytics to ensure that a chip will work as expected over its projected lifetime, but that data is frequently inconsistent or incomplete, and some of the most useful data is being hoarded by companies for competitive reasons. The volume of data is rising at each new process node, where there are simply more things to keep track of,... » read more

Identifying And Preventing Process Failures At 7nm
By Qingpeng Wang - 20 Apr, 2020 - Comments: 0

Device yield is highly dependent upon proper process targeting and variation control of fabrication steps, particularly at advanced nodes with smaller feature sizes. Traditionally, cross-correlation and analysis of thousands of test data points have been required to identify and prevent process failures. This is very costly in terms of both time and money. Fortunately, semiconductor virtual fab... » read more

Making Chips At 3nm And Beyond
By Mark LaPedus and Ed Sperling - 16 Apr, 2020 - Comments: 4

Select foundries are beginning to ramp up their new 5nm processes with 3nm in R&D. The big question is what comes after that. Work is well underway for the 2nm node and beyond, but there are numerous challenges as well as some uncertainty on the horizon. There already are signs that the foundries have pushed out their 3nm production schedules by a few months due to various technical issu... » read more

Big Changes In Tiny Interconnects
By Ed Sperling - 16 Apr, 2020 - Comments: 1

One of the fundamental components of a semiconductor, the interconnect, is undergoing radical changes as chips scale below 7nm. Some of the most pronounced shifts are occurring at the lowest metal layers. As more and smaller transistors are packed onto a die, and as more data is processed and moved both on and off a chip or across a package, the materials used to make those interconnects, th... » read more

The Impact Of EUV Resist Thickness On Via Patterning Uniformity
By Benjamin Vincent - 30 Mar, 2020 - Comments: 0

Via patterning at advanced nodes requires extremely low critical dimension (CD) values, typically below 30nm. Controlling these dimensions is a serious challenge, since there are many inherent sources of variation during lithography and etch processing. Coventor personnel, in conjunction with our colleagues from ASML and imec, recently looked at the impact of Extreme Ultraviolet lithography (EU... » read more

Improving EUV Process Efficiency
By Mark LaPedus - 19 Mar, 2020 - Comments: 2

The semiconductor industry is rethinking the manufacturing flow for extreme ultraviolet (EUV) lithography in an effort to improve the overall process and reduce waste in the fab. Vendors currently are developing new and potentially breakthrough fab materials and equipment. Those technologies are still in R&D and have yet to be proven. But if they work as planned, they could boost the flo... » read more

Defect Evolution In Next Generation, Extreme Ultraviolet Lithography
By Coventor - 18 Mar, 2020 - Comments: 1

Extreme ultraviolet (EUV) lithography is a promising next generation lithography technology that may succeed optical lithography at future technology nodes. EUV mask infrastructure and manufacturing of defect-free EUV mask blanks is a key near term challenge in the use of EUV lithography. Virtual fabrication is a computerized technique to perform predictive, three dimensional modeling of sem... » read more

The Next Technology Frontier In MEMS Gyroscopes
By Hideyuki Maekoba - 24 Feb, 2020 - Comments: 0

In MEMS technology development, it is always exciting to see the next technology frontier, the border of the known and the unknown. Talent and hard work (along with ingenuity) can move this frontier and enrich all of us. We respect the efforts of MEMS innovators, who have developed original and creative ideas by building upon past knowledge and wisdom and have integrated this knowledge across m... » read more

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