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Power/Performance Bits: Aug. 18


Reducing crosstalk with tantalum oxide memories Scientists at Rice University created a solid-state memory technology that allows for high-density storage with a minimum incidence of crosstalk errors. The memories are based on tantalum oxide. Applying voltage to a 250-nanometer-thick sandwich of graphene, tantalum, nanoporous tantalum oxide and platinum creates addressable bits where the ... » read more