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Impact Of GAA Transistors At 3/2nm


The chip industry is poised for another change in transistor structure as gate-all-around (GAA) FETs replace finFETs at 3nm and below, creating a new set of challenges for design teams that will need to be fully understood and addressed. GAA FETs are considered an evolutionary step from finFETs, but the impact on design flows and tools is still expected to be significant. GAA FETs will offer... » read more