tag: FeFET

Fabricating FeFET Devices with Silicon-Doped Hafnium Oxide As A Ferroelectric Layer
By Technical Paper Link - 06 Dec, 2022 - Comments: 0

A new technical paper titled "Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications" was published by researchers at Fraunhofer IPMS, GlobalFoundries, and TU Bergakademie Freiberg. Abstract (partial) "This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric... » read more

MAC Operation on 28nm High-k Metal Gate FeFET-based Memory Array with ADC (Fraunhofer IPMS/GF)
By Technical Paper Link - 01 Dec, 2022 - Comments: 0

A technical paper titled "Demonstration of Multiply-Accumulate Operation With 28 nm FeFET Crossbar Array" was published by researchers at Fraunhofer IPMS and GlobalFoundries. Abstract "This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide Semiconductor (CMOS) and ferroelectric fi... » read more

Reservoir Computing HW Based on a CMOS-Compatible FeFET
By Technical Paper Link - 07 Aug, 2022 - Comments: 0

A new technical paper titled "Reservoir computing on a silicon platform with a ferroelectric field-effect transistor" was published by researchers at the University of Tokyo. Researchers report "reservoir computing hardware based on a ferroelectric field-effect transistor (FeFET) consisting of silicon and ferroelectric hafnium zirconium oxide. The rich dynamics originating from the ferroelec... » read more

Neuromorphic HW Fabric That Supports A Recently Proposed Class of Stochastic Neural Network
By Technical Paper Link - 25 May, 2022 - Comments: 0

New research paper titled "Neural sampling machine with stochastic synapse allows brain-like learning and inference" from University of Notre Dame and Department of Cognitive Sciences, University of California Irvine. Abstract "Many real-world mission-critical applications require continual online learning from noisy data and real-time decision making with a defined confidence level. Brain-... » read more

Hardware Encryption: Ultra-compact Active Interconnect Based on FeFET
By Technical Paper Link - 02 May, 2022 - Comments: 0

New technical paper "Hardware functional obfuscation with ferroelectric active interconnects" from researchers at Penn State, Rochester Institute of Technology, GlobalFoundries Fab1, North Dakota State University. Abstract "Existing circuit camouflaging techniques to prevent reverse engineering increase circuit-complexity with significant area, energy, and delay penalty. In this paper, we... » read more

Nonvolatile Capacitive Crossbar Array for In-Memory Computing
By Technical Paper Link - 29 Mar, 2022 - Comments: 0

Abstract "Conventional resistive crossbar array for in-memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses transient current and charge transfer is gaining attention as it 1) only consumes dynamic power, 2) has no DC sneak paths and avoids severe IR drop (thus, selector-free), and 3) can be f... » read more

Manufacturing Bits: Oct. 26
By Mark LaPedus - 26 Oct, 2021 - Comments: 0

GaN finFETs, scaling GaN At the upcoming IEEE International Electron Devices Meeting (IEDM) in San Francisco, a slew of entities will present papers on the latest technologies in R&D. The event, to be held Dec. 11–15, involve papers on advanced packaging, CMOS image sensors, interconnects, transistors, power devices and other technologies. At IEDM, Intel will present a paper on a GaN-... » read more

Manufacturing Bits: July 21
By Mark LaPedus - 21 Jul, 2020 - Comments: 1

Intel’s next-gen MRAM At the recent 2020 Symposia on VLSI Technology and Circuits, Intel presented a paper on a CMOS-compatible spin-orbit torque MRAM (SOT-MRAM) device. Still in R&D, SOT-MRAM is a next-generation MRAM designed to replace SRAM. Generally, processors integrate a CPU, SRAM and a variety of other functions. SRAM stores instructions that are rapidly needed by the processo... » read more

The Next New Memories
By Mark LaPedus - 15 Aug, 2019 - Comments: 2

Several next-generation memory types are ramping up after years of R&D, but there are still more new memories in the research pipeline. Today, several next-generation memories, such as MRAM, phase-change memory (PCM) and ReRAM, are shipping to one degree or another. Some of the next new memories are extensions of these technologies. Others are based on entirely new technologies or involve ar... » read more

Embedded Phase-Change Memory Emerges
By Mark LaPedus - 24 Jan, 2019 - Comments: 3

The next-generation memory market for embedded applications is becoming more crowded as another technology emerges in the arena—embedded phase-change memory. Phase-change memory is not new and has been in the works for decades. But the technology has taken longer to commercialize amid a number of technical and cost challenges. Phase-change memory, a nonvolatile memory type that stores data... » read more

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