tag: Institute of Electronics Microelectronics and Nanotechnology

Power/Performance Bits: June 6

By Jesse Allen - 06 Jun, 2017 - Comments: 0

Magnetoelectric RAM A team of researchers from the Institute of Electronics, Microelectronics and Nanotechnology in Lille, France and the Russian Academy of Sciences in Moscow developed a magnetoelectric random access memory (MELRAM) cell that has the potential to increase power efficiency, and thereby decrease heat waste, by orders of magnitude for read operations at room temperature. Th... » read more

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