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Power/Performance Bits: March 17


MRAM speed Researchers at ETH Zurich and Imec investigated exactly how quickly magnetoresistive RAM (MRAM) can store data. In the team's MRAM, electrons with opposite spin directions are spatially separated by the spin-orbit interaction, creating an effective magnetic field that can be used to invert the direction of magnetization of a tiny metal dot. "We know from earlier experiments, i... » read more