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Power/Performance Bits: May 24


Reducing MRAM chip area Researchers from Tohoku University developed a technology to stack magnetic tunnel junctions (MTJ) directly on the via without causing deterioration to its electric/magnetic characteristics. The team focused on reducing the memory cell area of spin-transfer torque magnetic random access memory (STT-MRAM) in order to lower manufacturing costs, making them more compe... » read more

Manufacturing Bits: March 22


Tunable windows Harvard University has put a new twist on tunable windows. Researchers have devised a new manufacturing technique that can change the opacity of a window. With the flip of a switch, the window can become cloudy, clear or somewhere in the middle. Tunable windows, which aren’t new, rely on electrochemical reactions. Typically, the glass is coated with materials using vacuum... » read more

Manufacturing Bits: Feb. 16


Monoxide chips Two-dimensional (2D) materials are gaining steam in the R&D labs. The 2D materials could enable a new class of field-effect transistors (FETs), but the technology isn’t expected to appear until sometime in the next decade. The 2D materials include graphene, boron nitride and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is gaining inter... » read more

Manufacturing Bits: Jan. 14


MoS2 FETs Two-dimensional materials are gaining steam in the R&D labs. The 2D materials include graphene, boron nitride (BN) and the transition-metal dichalcogenides (TMDs). One TMD, molybdenum diselenide (MoS2), is an attractive material for use in future field-effect transistors (FETs). MoS2 has several properties, including a non-zero band gap, atomic scale thickness and pristine int... » read more