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Thinner Channels With 2D Semiconductors


Moving to future nodes will require more than just smaller features. At 3/2nm and beyond, new materials are likely to be added, but which ones and exactly when will depend upon an explosion of material science research underway at universities and companies around the globe. With field-effect transistors, a voltage applied to the gate creates an electric field in the channel, bending the ban... » read more

Internet of FD-SOI Things?


Are fully-depleted silicon-on-insulator (FD-SOI) wafers having a moment? Certainly SOI wafers are not new. Soitec’s SmartCut layer transfer technology was patented in 1994, and wafers with implanted oxide layers were available before that. Still, adoption of SOI wafers has been limited. Though they offer improved device isolation and reduced parasitics, the increased wafer cost has been an ob... » read more