tag: unidirectional spin Hall magnetoresistance

Power/Performance Bits: Jan. 21

By Jesse Allen - 21 Jan, 2020 - Comments: 0

Two-layer MRAM Scientists at Tokyo Institute of Technology propose a simpler MRAM construction that could perform faster with less power than conventional memories. The idea relies on unidirectional spin Hall magnetoresistance (USMR), a spin-related phenomenon that could be used to develop MRAM cells with an extremely simple structure. The spin Hall effect leads to the accumulation of elect... » read more

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