category: Technical Papers

category: Auto, Security & Edge AI

Standards for the Characterization of Endurance in Resistive Switching Devices
By Technical Paper Link - 03 Nov, 2021 - Comments: 0

Abstract "Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to... » read more

Research on Wire Sweep of Integrated Circuit Packaging Based on Three-dimensional Flow Simulation
By Technical Paper Link - 31 Oct, 2021 - Comments: 0

Abstract: "Semiconductor manufacturing technology is becoming more and more rapidly. In the process of Integrated Circuit (IC) encapsulation, when wires contact each other, it will cause short circuit. Wire sweep has become the main factor affecting the reliability of the product. Therefore, it is a great challenge to master wire sweep in IC packaging process. This paper takes Low Profile Fi... » read more

2021 CWE Most Important Hardware Weaknesses
By Technical Paper Link - 28 Oct, 2021 - Comments: 0

"The 2021 CWE™ Most Important Hardware Weaknesses is the first of its kind and the result of collaboration within the Hardware CWE Special Interest Group (SIG), a community forum for individuals representing organizations within hardware design, manufacturing, research, and security domains, as well as academia and government. The goals for the 2021 Hardware List are to drive awarenes... » read more

Materials and Device Simulations for Silicon Qubit Design and Optimization
By Technical Paper Link - 27 Oct, 2021 - Comments: 0

Abstract: "Silicon-based microelectronics technology is extremely mature, yet this profoundly important material is now also poised to become a foundation for quantum information processing technologies. In this article, we review the properties of silicon that have made it the material of choice for semiconductor-based qubits with an emphasis on the role that modeling and simulation have play... » read more

Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers
By Technical Paper Link - 27 Oct, 2021 - Comments: 0

Abstract: "We propose a buried nanomagnet (BNM) realizing highspeed/low-variability silicon spin qubit operation, inspired by buried wiring technology, for the first time. High-speed quantum-gate operation results from large slanting magnetic-field generated by the BNM disposed quite close to a spin qubit, and low-variation of fidelity thanks to the self-aligned fabrication process. Employing ... » read more

Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process
By Technical Paper Link - 26 Oct, 2021 - Comments: 0

Abstract: Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an ‘all-Silicon’ and lithographically flexible 300mm flow. ... » read more

Reaching silicon-based NEMS performances with 3D printed nanomechanical resonators
By Technical Paper Link - 19 Oct, 2021 - Comments: 0

Abstract: "The extreme miniaturization in NEMS resonators offers the possibility to reach an unprecedented resolution in high-performance mass sensing. These very low limits of detection are related to the combination of two factors: a small resonator mass and a high quality factor. The main drawback of NEMS is represented by the highly complex, multi-steps, and expensive fabrication process... » read more

Effect Of Environmental Factors On ADAS Sensor Performance (AAA)
By Technical Paper Link - 19 Oct, 2021 - Comments: 0

Abstract "Advanced driver assistance systems (ADAS) are becoming increasingly integrated within new vehicles sold in the United States. However, the majority of publicly available performance evaluations occur within idealized operation conditions in terms of weather, time of day, and sensor status, which are typically unrepresentative of naturalistic environments.  To evaluate the performa... » read more

MXene-GaN van der Waals metal-semiconductor junctions for high performance multiple quantum well photodetectors
By Technical Paper Link - 12 Oct, 2021 - Comments: 0

Abstract: "A MXene-GaN-MXene based multiple quantum well photodetector was prepared on patterned sapphire substrate by facile drop casting. The use of MXene electrodes improves the responsivity and reduces dark current, compared with traditional Metal-Semiconductor-Metal (MSM) photodetectors using Cr/Au electrodes. Dark current of the device using MXene-GaN van der Waals junctions is reduced b... » read more

A quantitative model for the bipolar amplification effect: A new method to determine semiconductor/oxide interface state densities
By Technical Paper Link - 12 Oct, 2021 - Comments: 0

Abstract "We report on a model for the bipolar amplification effect (BAE), which enables defect density measurements utilizing BAE in metal–oxide–semiconductor field-effect transistors. BAE is an electrically detected magnetic resonance (EDMR) technique, which has recently been utilized for defect identification because of the improved EDMR sensitivity and selectivity to interface defects.... » read more

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