Overcoming The vdW Gap Bottleneck in Semiconductor Scaling (TU Wien)


A new technical paper titled "The van der Waals Gap: a Hidden Showstopper in Semiconductor Device Scaling" was published by researchers at TU Wien. Abstract "Continued miniaturization of transistors is critical for sustaining advances in computing performance, energy efficiency, and integration density. A central nanoscale challenge is controlling gate leakage through ultrathin dielectrics.... » read more

Transition-Metal Nitride Halide Dielectrics for Transition-Metal Dichalcogenide Transistors


Abstract "Using first-principles calculations, we investigate six transition-metal nitride halides (TMNHs): HfNBr, HfNCl, TiNBr, TiNCl, ZrNBr, and ZrNCl as potential van der Waals (vdW) dielectrics for transition metal dichalcogenide (TMD) channel transistors. We calculate the exfoliation energies and bulk phonon energies and find that the six TMNHs are exfoliable and thermodynamically stabl... » read more