tag: FeFETs

FeFETs With Laminated Gate Stacks For Radiation Resilience in Vertical NAND (Georgia Tech)
By Technical Paper Link - 10 Mar, 2026 - Comments: 0

A new technical paper, "Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack," was published by researchers at Georgia Tech. Abstract "NAND flash forms the core of modern solid-state storage, which is critical for data-intensive AI applications, yet charge-trap NAND suffers rapid threshold-voltage (Vth) degradation under ionizing radiation, causi... » read more

Overview of Interface Dipole Engineering: Formation Mechanisms, Control Methods, And Emerging Applications (SNU, Sejong U.)
By Technical Paper Link - 06 Feb, 2026 - Comments: 0

Researchers at Seoul National University and Sejong University published "Interface dipole modulation for gate dielectrics in Field-Effect transistors: a review." Abstract "Interface dipole engineering has recently become a key technology in the fabrication of semiconductor FETs. This review comprehensively covers the principles, methods, and applications of interface dipoles in gate diel... » read more

Why In-Memory Computation Is So Important For Edge AI
By Katherine Derbyshire - 23 Oct, 2025 - Comments: 1

In popular media, “AI” usually means large language models running in expensive, power-hungry data centers. For many applications, though, smaller models running on local hardware are a much better fit. Autonomous vehicles need to respond in real-time, without data transmission delays. Medical and industrial applications often depend on sensitive data that cannot be shared with third par... » read more

Modulation of the Inner Gate Length in MFMIS NSFETs To Achieve Big Gains in Memory Window (Samsung, Seoul National Univ.)
By Technical Paper Link - 21 Oct, 2025 - Comments: 0

A new technical paper titled "Inner Gate Length Modulation of MFMIS Nanosheet FET Memory for Advanced Technology Nodes" was published by researchers at Samsung and Seoul National University. Abstract "This work proposes a new way of lowering the area ratio (AR) between the ferroelectric and metal-oxide-semiconductor (MOS) regions of metal-ferroelectric-metal-insulator-semiconductor (MFMIS) ... » read more

2D Ferroelectric Field-Effect Transistors (Penn State, U. of Minnesota)
By Technical Paper Link - 30 Dec, 2024 - Comments: 0

A new technical paper titled "Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures" was published by researchers at Penn State University and University of Minnesota. Abstract "Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly... » read more

Preparing For Ferroelectric Devices
By Katherine Derbyshire - 02 Oct, 2024 - Comments: 0

The discovery of ferroelectricity in materials that are compatible with integrated circuit manufacturing has sparked a wave of interest in ferroelectric devices. Ferroelectrics are materials with a permanent polarization, the direction of which can be switched by an applied field. This polarization can be used to raise or lower the threshold voltage of a transistor, as in FeFETs, or it can c... » read more

Ferroelectric Memory-Based IMC for ML Workloads
By Technical Paper Link - 21 May, 2024 - Comments: 0

A new technical paper titled "Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads" was published by researchers at Purdue University. Abstract "This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate mach... » read more

Suitability of FeFET-Based CAM Cells For Storage-Class Memory, Under Junction Temperature Variations
By Technical Paper Link - 15 Jan, 2024 - Comments: 0

A technical paper titled “Ferroelectric Field Effect Transistors–Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility” was published by researchers at Fraunhofer Institute for Photonic Microsystems (IPMS) and Indian Institute of Technology Madras (IIT Madras). Abstract: "Hafnium oxide (HfO2)-based ferroelectric fiel... » read more

Ferroelectric Memories Answer Call For Non-Volatile Alternatives
By Katherine Derbyshire - 21 Sep, 2023 - Comments: 0

As system designers seek to manipulate larger data sets while reducing power consumption, ferroelectric memory may be part of the solution. It offers an intermediate step between the speed of DRAM and the stability of flash memory. Changing the polarization of ferroelectric domains is extremely fast, and the polarization remains stable without power for years, if not decades. FeFETs, one of ... » read more

A Search Framework That Optimizes Hybrid-Device IMC Architectures For DNNs, Using Chiplets
By Technical Paper Link - 08 Aug, 2023 - Comments: 0

A technical paper titled “HyDe: A Hybrid PCM/FeFET/SRAM Device-search for Optimizing Area and Energy-efficiencies in Analog IMC Platforms” was published by researchers at Yale University. Abstract: "Today, there are a plethora of In-Memory Computing (IMC) devices- SRAMs, PCMs & FeFETs, that emulate convolutions on crossbar-arrays with high throughput. Each IMC device offers its own pr... » read more

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