3nm GAA-FET SRAM Review Evaluates Self-Heating And Radiation Hardness (SJSU, Sandia)


Researchers from San Jose State University and Sandia National Laboratories published a technical paper titled “Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques.” Abstract Excerpt: “In addition to the traditional bottom dielectric isolation (BDI), which isolates the source/drain (S/D) from the substrate (dubbed SD-BDI),... » read more

When You Can’t Afford To Scrimp On System Reliability


Failure happens, whether we like it or not. What’s important is to be prepared for failure to occur, which involves putting in place measures that allow us to quickly address or resolve the problem. But not all failures are created equally. For example, a laptop that you use daily might experience occasional glitches. If it’s well-designed, you can simply reset the machine to get it back to... » read more