Advanced Packaging for High-Bandwidth Memory: Influences of TSV size, TSV Aspect Ratio And Annealing Temperature


A technical paper titled "Stress Issue of Vertical Connections in 3D Integration for High-Bandwidth Memory Applications" was published by researchers at National Yang Ming Chiao Tung University. Abstract: "The stress of TSV with different dimensions under annealing condition has been investigated. Since the application of TSV and bonding technology has demonstrated a promising approach for ... » read more