MoS2 Memristors With Fast Switching Speed and Low Power Consumption (AMO, RWTH Aachen et al.)


A new technical paper titled "Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications" was published by researchers at AMO GmbH, RWTH Aachen, Forschungszentrum Jülich, Peter Grünberg Institute, Eindhoven University of Technology et al. Abstract "Memristors based on 2D materials have garnered signifi... » read more

Research Bits: Oct. 13


Mimicking neural plasticity Researchers from Korea Advanced Institute of Science and Technology (KAIST) developed a frequency switching neuristor device that mimics the intrinsic plasticity of neurons. The device can autonomously adjust the frequency of its signals, similar to the way the brain becomes less startled by repeated stimuli or becomes increasingly sensitive through training. The... » read more

Power/Performance Bits: Oct. 18


Speeding up memory with T-rays Scientists at the Moscow Institute of Physics and Technology (MIPT), the University of Regensburg in Germany, Radboud University Nijmegen in the Netherlands, and Moscow Technological University proposed a way to improve the performance of memory through using T-waves, or terahertz radiation, as a means of resetting memory cells. This process is several thousand... » read more