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Cu/SiO₂ Hybrid Bond Interconnects


Technical paper titled "Microstructure Development of Cu/SiO₂ Hybrid Bond Interconnects After Reliability Tests" from researchers at TU Dresden and others. Abstract: "The focus of this study is a detailed characterization of hybrid Cu/SiO 2 wafer-to-wafer bonding interconnects after reliability testing. Hybrid bonding (or direct bond interconnect) is a technology of choice for fine pitch... » read more