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Week In Review: Design, Low Power


Memory CEA-Leti demonstrated 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node. It utilizes back-end-of-line (BEOL) integration of TiN/HfO2:Si/TiN ferroelectric capacitors as small as 0.16 µm² and solder reflow compatibility for the first time for this type of memory. The researchers anticipate it will be useful for embedded applications such at IoT and wearable dev... » read more