Electrical Model of the Bitflip in SRAM Under Laser Illumination Simulating Laser Fault Injection


A new technical paper, "Electrical modelisation of a bitflip in SRAM cell memory induced by laser fault injection," was published by researchers at Univ Rennes, CNRS, IETR. Abstract "An electrical model of the bitflip in SRAM under laser illumination simulating laser fault injection is proposed. This model is based on a bipolar phototransistor responsible of the amplified induced photocur... » read more