Epi SiGe Application Using METRION In-Line SIMS System


The epitaxial process is a well-established deposition technique in semiconductor fabrication because it enables the ability to achieve much higher doping concentrations than can be obtained via ion implantation. As we move toward <5nm technology, a key process for enabling gate-all-around FET (GAAFET) is the stacked multi-lattice of Silicon (Si) and Silicon-germanium (SiGe) epi process for ... » read more

Ion Implantation Applications For In-Line SIMS Metrology


By Wei Ti Lee, Sarah Okada, Lawrence Rooney, Feng Zhang, and Benjamin Hickey In the semiconductor industry, ion implantation process has expanded to a wide range of applications with doses and energies spanning several orders of magnitude. Ion implantation is a very complicated process with many parameters and factors that affect the implant profile. For example, shadowing effects from high... » read more