3nm GAA-FET SRAM Review Evaluates Self-Heating And Radiation Hardness (SJSU, Sandia)


Researchers from San Jose State University and Sandia National Laboratories published a technical paper titled “Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques.” Abstract Excerpt: “In addition to the traditional bottom dielectric isolation (BDI), which isolates the source/drain (S/D) from the substrate (dubbed SD-BDI),... » read more

Innovations in Device Design of The Gate-All-Around (GAA) Nanosheet FETs (IBM Research)


A technical paper titled "A Review of the Gate-All-Around Nanosheet FET Process Opportunities" was published by researchers at IBM Research Albany. Abstract: "In this paper, the innovations in device design of the gate-all-around (GAA) nanosheet FET are reviewed. These innovations span enablement of multiple threshold voltages and bottom dielectric isolation in addition to impact of channel... » read more