Research Bits: June 15


NAND in space Researchers from Georgia Institute of Technology and Pennsylvania State University built ferroelectric NAND flash memory chips that can withstand up to 30 times higher radiation levels compared to conventional NAND. “If you send traditional flash memory to space, the radiation interacting with flash memory’s trapped electric charge can easily corrupt the data,” said Asif... » read more

FeFETs With Laminated Gate Stacks For Radiation Resilience in Vertical NAND (Georgia Tech)


A new technical paper, "Enabling Radiation Hardness in Solid-State NAND Storage Utilizing a Laminated Ferroelectric Stack," was published by researchers at Georgia Tech. Abstract "NAND flash forms the core of modern solid-state storage, which is critical for data-intensive AI applications, yet charge-trap NAND suffers rapid threshold-voltage (Vth) degradation under ionizing radiation, causi... » read more