Performance Of A Memory System With FeRAM vs. DRAM (Georgia Tech, Imec, NTUA)


A new technical paper titled "Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model" was published by researchers at Georgia Tech, imec and National Technical University of Athens. Abstract "We present a framework for design technology co-optimization (DTCO) of the main memory system with one transistor-one capacitor (1T1C) ferroelectric random access memory (FE... » read more

Data Retention Performance Of 0.13µm F-RAM Memory


F-RAM (Ferroelectric random access memory) is a non-volatile memory that uses a ferroelectric capacitor for storing data. It offers higher write speeds over flash/EEPROM. This white paper provides a brief overview of data retention performance of F-RAM memory. Click here for more. » read more

Data Retention Performance Of 0.13-μm F-RAM Memory


F-RAM (Ferroelectric random access memory) is a non-volatile memory that uses a ferroelectric capacitor for storing data. It offers higher write speeds over flash/EEPROM. This white paper provides a brief overview of data retention performance of F-RAM memory. Click here to read more. » read more