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Week In Review: Design, Low Power


The U.S. Commerce Department's Bureau of Industry and Security (BIS) issued new export controls on EDA software aimed at designing gate-all-around FETs, which manufacturers plan to implement starting at 3nm (Samsung) and 2nm (Intel and TSMC). Specifically, the ruling controls export of software that is specially designed for implementing RTL to GDSII (or an equivalent standard) for GAA FET desi... » read more