Research Bits: Mar. 24


Dual-modulated transistor Researchers from Daegu Gyeongbuk Institute of Science and Technology (DGIST) and University of Cambridge designed dual-modulated vertically stacked transistors in which two gates, positioned above and below in a sandwich-like structure, control the channel through different mechanisms. The lower electrode contains microscopic openings to allow electric signals to p... » read more

Scalable Fabrication of Graphene FETs on Non-Planar Surfaces (Imperial College London)


A new technical paper titled "Fabrication of graphene field effect transistors on complex non-planar surfaces" was published by researchers at Imperial College London. Abstract "Graphene field effect transistors (GFETs) are promising devices for biochemical sensing. Integrating GFETs onto complex non-planar surfaces could uncap their potential in emerging areas of wearable electronics, such... » read more