Epitaxial Growth Of Up To 120 Si/SiGe Bilayers In View of 3D DRAM Applications (imec, Ghent Univ.)


A new technical paper titled "Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications" was published by researchers at imec and Ghent University. Abstract "Epitaxially grown Si/Si1−xGex multi-stacks with ≥100 bilayers (≥200 sublayers) are being considered for three dimensionally vertically stacked dynamic rando... » read more