A new technical paper titled "Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications" was published by researchers at imec and Ghent University.
Abstract
"Epitaxially grown Si/Si1−xGex multi-stacks with ≥100 bilayers (≥200 sublayers) are being considered for three dimensionally vertically stacked dynamic rando...
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