Mask Economics Shape High-NA EUV Adoption


Key Takeaways: Mask costs are not stopping leading-edge scaling, but they increasingly influence design, node, and process choices. High-NA EUV will tighten requirements for CD, EPE, local CDU, mask 3D modeling, stitching, and materials. Reduced depth of focus in High-NA EUV will drive new resist, etch, film, and absorber approaches. Experts at the table:Semiconductor Engine... » read more

Curvilinear Masks Push The Limits Of Inspection And Metrology


Key Takeaways: Curvilinear masks require native data flows across design, mask data prep, writing, inspection, and metrology. Inspection is shifting from finding all defects to identifying which mask variations actually print on wafer. High-NA EUV will intensify inspection challenges, particularly for small printable defects and actinic contrast limits. Experts at the table... » read more

Bringing Curvilinear Data To Mask Data Prep


Advanced nodes that have been leveraging curvilinear correction with technologies such as ILT and curvilinear OPC are increasingly requiring the use of curvilinear masks to meet advanced feature size and pitch requirements. However, building curvilinear masks with standard OASIS file formats can come at the cost of large file sizes, increased turnaround time, and reduced quality of results. The... » read more

Big Changes Ahead For Photomask Technology


The move to curvilinear shapes on photomasks is gaining steam after years of promise as a way of improving yield, lowering defectivity, and reducing wasted space on a die — all of which are essential for both continued scaling and improved reliability in semiconductors. Interest in this approach ran high at this year's SPIE Photomask Technology + EUV Lithography Conference. Put simply, cur... » read more