3D Imaging Buried Interfaces In Twisted Oxide Moirés (Cornell, SLAC, Stanford et al.)


A new technical paper titled "Mind the Gap -- Imaging Buried Interfaces in Twisted Oxide Moirés" was published by researchers at Cornell University, SLAC National Accelerator Laboratory, Stanford University, USC, North Carolina State University, University of Chicago, Institute for Basic Science and POSTECH. Abstract "The ability to tune electronic structure in twisted stacks of layered, t... » read more

GAA Transistors: 3D Atomic-Scale Metrology of Strain Relaxation and Roughness via Electron Ptychography (Cornell, ASM, TSMC)


A new technical paper titled "3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography" was published by researchers at Cornell University, ASM and TSMC. Abstract "To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes dow... » read more